Structural analysis of InAs/GaAs strained-layer superlattices grown by migration enhanced epitaxy

Y. Iwai; Mitsuaki Yano; Rika Hagiwara; M. Inoue

doi:10.1088/0268-1242/6/11/003

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Structural analysis of InAs/GaAs strained-layer superlattices grown by migration enhanced epitaxy

Y. Iwai Mitsuaki Yano Rika Hagiwara M. Inoue

Year: 1991 Journal: Semiconductor Science and Technology Vol: 6 (11)Pages: 1048-1053 Publisher: IOP Publishing

DOI: 10.1088/0268-1242/6/11/003

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Abstract

Highly strained (InAs)6(GaAs)6 superlattices have been grown by using migration enhanced epitaxy (MEE) on InP(100) substrates. Optical properties of samples were studied by Raman scattering and photoluminescence measurements to characterize the fine superlattice structures. The effects of MEE growth condition on the periodic structure are discussed in conjunction with the surface stoichiometry of growing layers. The surface stoichiometry was studied by observing the intensity oscillation of reflection high energy electron diffraction signals.

Keywords:

Superlattice Photoluminescence Epitaxy Stoichiometry Raman scattering Electron diffraction Materials science Optoelectronics Diffraction Layer (electronics) Reflection (computer programming) Raman spectroscopy Chemistry Condensed matter physics Optics Nanotechnology

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Structural analysis of InAs/GaAs strained-layer superlattices grown by migration enhanced epitaxy

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