InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy

Yoshiki Sakuma; Masashi Ozeki; K. Kodama; N. Ohtsuka

doi:10.1016/0022-0248(91)90762-t

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InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy

Yoshiki Sakuma Masashi Ozeki K. Kodama N. Ohtsuka

Year: 1991 Journal: Journal of Crystal Growth Vol: 115 (1-4)Pages: 324-327 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(91)90762-t

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Keywords:

Trimethylindium Superlattice Atomic layer epitaxy Arsine Epitaxy Layer (electronics) Materials science Period (music) Heterojunction Diffraction Optoelectronics Phosphine Chemistry Crystallography Metalorganic vapour phase epitaxy Nanotechnology Optics Catalysis Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photonic Crystals and Applications

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy

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