JOURNAL ARTICLE

InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy

Yoshiki SakumaMasashi OzekiK. KodamaN. Ohtsuka

Year: 1991 Journal:   Journal of Crystal Growth Vol: 115 (1-4)Pages: 324-327   Publisher: Elsevier BV
Keywords:
Trimethylindium Superlattice Atomic layer epitaxy Arsine Epitaxy Layer (electronics) Materials science Period (music) Heterojunction Diffraction Optoelectronics Phosphine Chemistry Crystallography Metalorganic vapour phase epitaxy Nanotechnology Optics Catalysis Physics

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9
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0.79
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Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Photonic and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Photonic Crystals and Applications
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
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