Atomic layer epitaxy of ZnSe-ZnTe strained layer superlattices

Shiro Dosho; Yasushi Takemura; Makoto Konagai; Kiyoshi Takahashi

doi:10.1016/0022-0248(89)90470-3

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Atomic layer epitaxy of ZnSe-ZnTe strained layer superlattices

Shiro Dosho Yasushi Takemura Makoto Konagai Kiyoshi Takahashi

Year: 1989 Journal: Journal of Crystal Growth Vol: 95 (1-4)Pages: 580-583 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(89)90470-3

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Keywords:

Superlattice Molecular beam epitaxy Photoluminescence Atomic layer epitaxy Transmission electron microscopy Layer (electronics) Full width at half maximum Diffraction Materials science Epitaxy Optoelectronics Monolayer Electron diffraction Optics Chemistry Crystallography Nanotechnology Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Atomic layer epitaxy of ZnSe-ZnTe strained layer superlattices

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