Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy
Jean‐Michel GérardJ. Y. MarzinB. JusserandFrank GlasJ. Primot
Abstract
InAs/GaAs highly strained short-period superlattices have been grown by migration-enhanced epitaxy on InP(001) substrates. Such samples exhibit clearly improved structural and optical properties. X-ray diffraction, scanning transmission electron microscopy, photoluminescence, and Raman scattering experiments have been performed to characterize an (InAs)4(GaAs)3 layer.
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