High resolution electron microscopy of InAs/GaAs strained-layer superlattices

C. d’Anterroches; J. Y. Marzin; G. Le Roux; Leon J. Goldstein

doi:10.1016/0022-0248(87)90378-2

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High resolution electron microscopy of InAs/GaAs strained-layer superlattices

C. d’Anterroches J. Y. Marzin G. Le Roux Leon J. Goldstein

Year: 1987 Journal: Journal of Crystal Growth Vol: 81 (1-4)Pages: 121-129 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(87)90378-2

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Keywords:

Superlattice Tetragonal crystal system Transmission electron microscopy Molecular beam epitaxy Materials science Epitaxy Optoelectronics Layer (electronics) Diffraction Thin film Electron diffraction High-resolution transmission electron microscopy Optics Condensed matter physics Crystallography Chemistry Nanotechnology Crystal structure Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

High resolution electron microscopy of InAs/GaAs strained-layer superlattices

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