70‐3: Distinguished Student Paper: Hydrogen‐free Oxide Thin‐Film Transistor Toward Resolving Hydrogen‐Associated Instability

Abstract

We propose and demonstrate the concept of hydrogen‐free (Hfree) amorphous oxide semiconductor thin‐film transistor (AOS TFT) to resolve hydrogen‐associated instability of the TFT. Hfree SiO 2 and SiNx films were successfully deposited by largearea inductively coupled plasma chemical vapor deposition (ICPCVD) using hydrogen‐free source gases. Both films were applied as the gate insulator and passivation layers of the TFT, respectively. The H‐free In–Ga–Zn–Sn–O (IGZTO) TFT showed field‐effect mobility of 23.2 cm 2 /Vs and excellent stability under positive gate bias stress for 7200 s at stress temperatures in the range of 60–100 °C.