24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation

Abstract

Amorphous indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) with or without fluorinated channels were fabricated. The sensitivity of their electrical characteristics to hydrogen exposure was compared. It is shown that those built with fluorinated IGZO exhibit improved intrinsic resistance against hydrogen‐induced degradation. Such improvement correlates well with the reduced incorporation of hydrogen in the fluorinated channels, as revealed by secondary ion‐mass spectrometry. Fluorinated IGZO TFTs are better suited for integration with hydrogen‐containing devices, such as photo‐diodes based on amorphous hydrogenated silicon and TFTs based on low‐temperature polycrystalline silicon.