Large-Scale Atomically Thin Monolayer 2H-MoS₂ Field-Effect Transistors

Abstract

A viable\nsolution for the large-scale production of MoS₂ thin films\ndirectly on SiO₂/Si with relatively larger\ngrowth rates is demonstrated via a gas-phase precursor-assisted chemical\nvapor deposition approach. Comprehensive Raman and photoluminescence\nmeasurements reveal the excellent spatial homogeneity and high optical\nquality of the MoS₂ thin films. The electrical properties\nof the MoS₂ layers were tested by fabricating arrays of\nback-gated monolayer MoS₂ field-effect transistors. Our\nfindings suggest that the electrical properties are influenced by\nthe grain size of the MoS₂ monolayers.