Ultrascaled\nContacts to Monolayer MoS₂ Field\nEffect Transistors

Abstract

Two-dimensional (2D) semiconductors\npossess promise for\nthe development\nof field-effect transistors (FETs) at the ultimate scaling limit due\nto their strong gate electrostatics. However, proper FET scaling requires\nreduction of both channel length (<i>L</i>_CH)\nand contact length (<i>L</i>_C), the latter of\nwhich has remained a challenge due to increased current crowding at\nthe nanoscale. Here, we investigate Au contacts to monolayer MoS₂ FETs with <i>L_{<i>C</i><i>H</i>}</i> down to 100 nm and <i>L</i>_C down to 20 nm to evaluate the impact of contact scaling on FET performance.\nAu contacts are found to display a ∼2.5× reduction in\nthe ON-current, from 519 to 206 μA/μm, when <i>L</i>_C is scaled from 300 to 20 nm. It is our belief that this\nstudy is warranted to ensure an accurate representation of contact\neffects at and beyond the technology nodes currently occupied by silicon.