Large-Scale Atomically Thin Monolayer 2H-MoS₂ Field-Effect Transistors

Abstract

A viable solution for the large-scale production of MoS2 thin films directly on SiO2/Si with relatively larger growth rates is demonstrated via a gas-phase precursor-assisted chemical vapor deposition approach. Comprehensive Raman and photoluminescence measurements reveal the excellent spatial homogeneity and high optical quality of the MoS2 thin films. The electrical properties of the MoS2 layers were tested by fabricating arrays of back-gated monolayer MoS2 field-effect transistors. Our findings suggest that the electrical properties are influenced by the grain size of the MoS2 monolayers.