Solution-Processed SnSe/MoSe₂ Hybrid Nanostructures\nfor High-Performance Infrared Photodetection

Abstract

MoSe₂ maintains high potential\nfor various applications\neven though its low conductive property limits its technical performance.\nHerein, due to the integration of highly conductive SnSe, a mild solution-phase\nsynthetic route was designed for fabricating SnSe/MoSe₂ heterojunction-like hybrid nanosheets with improved transport properties.\nThese nanosheets were applied for setting up a vertical photodetector\nover a Si-wafer substrate, which was used for performing a high response\nspeed and wide-spectrum detection. Under 1064 nm illumination with\nan intensity of 2 μW cm^–2, the photodetector\nexhibited high responsivity (33.2 A W^–1), high detectivity\n(5.1 × 10¹² Jones), and fast response speed (283 μs).