Solution-Processed SnSe/MoSe₂ Hybrid Nanostructures for High-Performance Infrared Photodetection

Abstract

MoSe2 maintains high potential for various applications even though its low conductive property limits its technical performance. Herein, due to the integration of highly conductive SnSe, a mild solution-phase synthetic route was designed for fabricating SnSe/MoSe2 heterojunction-like hybrid nanosheets with improved transport properties. These nanosheets were applied for setting up a vertical photodetector over a Si-wafer substrate, which was used for performing a high response speed and wide-spectrum detection. Under 1064 nm illumination with an intensity of 2 μW cm–2, the photodetector exhibited high responsivity (33.2 A W–1), high detectivity (5.1 × 1012 Jones), and fast response speed (283 μs).