Fast\nFabrication of WS₂/Bi₂Se₃ Heterostructures\nfor High-Performance Photodetection

Abstract

Two-dimensional\n(2D) material heterostructures have attracted considerable\nattention owing to their interesting and novel physical properties,\nwhich expand the possibilities for future optoelectronic, photovoltaic,\nand nanoelectronic applications. A portable, fast, and deterministic\ntransfer technique is highly needed for the fabrication of heterostructures.\nHerein, we report a fast half-wet poly(dimethylsiloxane) (PDMS) transfer\nprocess utilizing the change of adhesion energy with the help of micron-sized\nwater droplets. Using this method, a vertical stacking of the WS₂/Bi₂Se₃ heterostructure with a straddling\nband configuration is successfully assembled on a fluorophlogopite\nsubstrate. Thanks to the complementary band gaps and high efficiency\nof interfacial charge transfer, the photodetector based on the heterostructure\nexhibits a superior responsivity of 109.9 A W^–1 for\na visible incident light at 473 nm and 26.7 A W^–1 for a 1064 nm near-infrared illumination. Such high photoresponsivity\nof the heterostructure demonstrates that our transfer method not only\nowns time efficiency but also ensures high quality of the heterointerface.\nOur study may open new pathways to the fast and massive fabrication\nof various vertical 2D heterostructures for applications in twistronics/valleytronics\nand other band engineering devices.