Finding a Promising Oxide Material for Resistive Random Access Memory with Graphene Electrode

Abstract

In this work, we attempt to find a suitable oxide resistive layer among four popular metal oxides, including HfO X , NiO X , TaO X , and TiO X for GE-based RRAM devices by investigating the device performance using a fully experimentally calibrated numerical simulation model. The results reveal that among four metal oxides, HfO X resistive layer with GE provides lower reset voltage (0.12 V), lower sneak current (81.07 nA) with better power efficiency (45.92%) for 2 ⁸ bit capacity. On the other hand, NiO X -based RRAM shows a higher switching current (14.45 $\mu$A), more thermal stability, better uniform and distinguishable multilevel states, and higher readout margin for crossbar array size. Our study offers a comprehensive examination of the performance characteristics of distinct resistive layer materials that can provide an important guide to experimental efforts and trigger more efforts.