Resistive random access memory based on graphene oxide with UV-O3 treatment

BeomKyu Shin; Jong Yun Kim; Oh Hun Gwon; Seok‐Ju Kang; Hye Ryung Byun; Seo Gyun Jang; Young‐Jun Yu

doi:10.1007/s40042-023-00832-8

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Resistive random access memory based on graphene oxide with UV-O3 treatment

BeomKyu Shin Jong Yun Kim Oh Hun Gwon Seok‐Ju Kang Hye Ryung Byun Seo Gyun Jang Young‐Jun Yu

Year: 2023 Journal: Journal of the Korean Physical Society Vol: 83 (1)Pages: 38-42 Publisher: Springer Science+Business Media

DOI: 10.1007/s40042-023-00832-8

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Keywords:

Resistive random-access memory Graphene Materials science Oxide Resistive touchscreen Optoelectronics Voltage Random access Nanotechnology Computer science Electrical engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Resistive random access memory based on graphene oxide with UV-O3 treatment

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