Abstract

This paper presents an overview of three works about graphene-based resistive random access memory (RRAM). The fabrication, device performance and working mechanism of graphene-inserted electrode RRAM, RRAM based on laser-scribed reduced graphene and gate-controlled graphene-electrode RRAM are introduced. This work may inspire new design of high-performance RRAM based on two-dimensional material and its application in electronic systems.

Keywords:
Resistive random-access memory Graphene Materials science Fabrication Electrode Optoelectronics Resistive touchscreen Nanotechnology Computer science Electrical engineering Engineering Physics

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Topics

Advanced Memory and Neural Computing
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ferroelectric and Negative Capacitance Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Neuroscience and Neural Engineering
Life Sciences →  Neuroscience →  Cellular and Molecular Neuroscience

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