This paper presents an overview of three works about graphene-based resistive random access memory (RRAM). The fabrication, device performance and working mechanism of graphene-inserted electrode RRAM, RRAM based on laser-scribed reduced graphene and gate-controlled graphene-electrode RRAM are introduced. This work may inspire new design of high-performance RRAM based on two-dimensional material and its application in electronic systems.
Jong Yeog SonYoung‐Han ShinHyungjun KimHyun M. Jang
Pooria KoohzadiMohammad Taghi AhmadiJavad KaramdelTruong Khang Nguyen
Yong HuangZihan ShenYe WuXiaoqiu WangShufang ZhangXiaoqin ShiHaibo Zeng
BeomKyu ShinJong Yun KimOh Hun GwonSeok‐Ju KangHye Ryung ByunSeo Gyun JangYoung‐Jun Yu