Amorphous ZnO based resistive random access memory

Yong Huang; Zihan Shen; Ye Wu; Xiaoqiu Wang; Shufang Zhang; Xiaoqin Shi; Haibo Zeng

doi:10.1039/c5ra22728c

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Amorphous ZnO based resistive random access memory

Yong Huang Zihan Shen Ye Wu Xiaoqiu Wang Shufang Zhang Xiaoqin Shi Haibo Zeng

Year: 2016 Journal: RSC Advances Vol: 6 (22)Pages: 17867-17872 Publisher: Royal Society of Chemistry

DOI: 10.1039/c5ra22728c

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Abstract

Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated.

Keywords:

Resistive random-access memory Amorphous solid Materials science Resistive touchscreen Optoelectronics Random access memory Random access Nanotechnology Computer science Chemistry Electrical engineering Crystallography Voltage Computer hardware Computer network Engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Neuroscience and Neural Engineering

Life Sciences → Neuroscience → Cellular and Molecular Neuroscience

Amorphous ZnO based resistive random access memory

Abstract

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