This paper introduces an ultra-wideband dual-polarization absorber/reflector based on reconfigurable metasurface loaded with PIN diodes, where the metasurface is performed as a wideband absorber or reflector with ON and OFF state diodes. The proposed structure consists of the top active metasurface layer, one patterned resistive films, and a simple bias network layer. The top layer of the active metasurface achieves absorption and reflection of high-frequency electromagnetic waves, while the bottom layer of the metasurface achieves absorption of low-frequency electromagnetic waves. When combined, they enable ultra-wideband absorption/reflection. The PIN diodes loaded on the active metasurface are controlled by a bias network on the back of the dielectric substrate. While switched to the absorber mode, it achieves more than 80% absorptivity ranging from 2.3 to 25 GHz, corresponding to a fractional bandwidth of 166 % .Under the reflection state, a reflectivity of greater than 50% is achieved over a frequency band ranging from 7.6 to 15.8 GHz with a relative bandwidth of 70%. Additionally, the proposed structure demonstrates excellent stability with respect to different incident angles and polarizations.
Yihao XuXiongbin WuAnqi LiYong Jin Zhou
Anqi LiXiongbin WuYihao XuYong Jin Zhou
X. ZhouFan DingHouyuan ChengYang FuXiaofeng ZhouJing JinHelin Yang
Jianghao TianXiangyu CaoJun Gao