Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application

Zhi-Yue Li; Shumei Song; Wanxia Wang; Mingjiang Dai; Songsheng Lin; Tingyong Chen; Hui Sun

doi:10.1039/d3ma00500c

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Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application

Zhi-Yue Li Shumei Song Wanxia Wang Mingjiang Dai Songsheng Lin Tingyong Chen Hui Sun

Year: 2023 Journal: Materials Advances Vol: 4 (24)Pages: 6535-6541 Publisher: Royal Society of Chemistry

DOI: 10.1039/d3ma00500c

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Abstract

N-doped InSnZnO (ITZO:N) thin films as the active layer of thin film transistors (TFTs) were prepared using radio frequency (RF) magnetron sputtering at room temperature.

Keywords:

Thin-film transistor Materials science Sputtering Optoelectronics Thin film Amorphous solid Doping Sputter deposition Layer (electronics) Transistor Radio frequency Electrical engineering Nanotechnology Chemistry Crystallography Voltage Engineering

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application

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