P‐1.1: Co‐sputtering‐deposited Hf‐doped ITO Thin Films for Thin Film Transistors Application

Abstract

Oxide thin film transistors (TFTs) attract much attention in fields of advanced displays and low‐cost integrated circuits (ICs). In this work, hafnium doped InSnO (Hf‐ITO) thin films are deposited by co‐sputtering process, and are applied as the active layer to TFTs. Notably, the Hf‐ITO TFTs exhibit excellent device performance, preferable uniformity, and good gate‐bias‐stress stability. Major electrical parameters of the Hf‐ITO TFTs include a field‐effect mobility (μ FE ) of 7.46 cm 2 V −1 s −1 , a turn‐on voltage (V ON ) of 1.10 V, a sub‐threshold swing (SS) of 341.18 mV/decade, and an on/off state current ratio (I ON /I OFF ) over 10 5 . Our work proposes a novel method for developing high‐mobility semiconductor oxide films and oxide TFTs.