Nanoscale Thermal Transport in Vertical Gate- All-Around Junctionless Nanowire Transistors— Part II: Multiphysics Simulation

Houssem Rezgui; C. Mukherjee; Yan Wang; Marina Deng; Abhishek Kumar; Jonas Müller; Guilhem Larrieu; Cristell Maneux

doi:10.1109/ted.2023.3321280

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Nanoscale Thermal Transport in Vertical Gate- All-Around Junctionless Nanowire Transistors— Part II: Multiphysics Simulation

Houssem Rezgui C. Mukherjee Yan Wang Marina Deng Abhishek Kumar Jonas Müller Guilhem Larrieu Cristell Maneux

Year: 2023 Journal: IEEE Transactions on Electron Devices Vol: 70 (12)Pages: 6505-6511 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/ted.2023.3321280

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Abstract

International audience

Keywords:

Multiphysics Nanowire Transistor Nanoscopic scale Materials science Thermal Silicon Nanotechnology Nanoelectronics Engineering physics Optoelectronics Engineering Electrical engineering Finite element method Physics Structural engineering

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Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thermal properties of materials

Physical Sciences → Materials Science → Materials Chemistry

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Nanoscale Thermal Transport in Vertical Gate- All-Around Junctionless Nanowire Transistors— Part II: Multiphysics Simulation

Abstract

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Citation History

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