Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

Youssouf Guerfi; Guilhem Larrieu

doi:10.1186/s11671-016-1396-7

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Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

Youssouf Guerfi Guilhem Larrieu

Year: 2016 Journal: Nanoscale Research Letters Vol: 11 (1) Publisher: Springer Science+Business Media

DOI: 10.1186/s11671-016-1396-7

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Abstract

International audience

Keywords:

Materials science Nanowire Miniaturization Transistor Inverter Optoelectronics Nanotechnology Nanoscopic scale Silicon nanowires Field-effect transistor Drain-induced barrier lowering Nanoelectronics Silicon CMOS Subthreshold slope Electrical engineering Voltage Engineering

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125

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5.74

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0.97

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Topics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

Abstract

Metrics

Citation History

Topics

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