Vertical 3D diamond field effect transistors with nanoscale gate-all-around

Chi Sun; Shuo Du; Yang Guo; Tingting Hao; Linyuan Zhao; Renrong Liang; Haitao Ye; Junjie Li; Changzhi Gu

doi:10.1016/j.mssp.2022.106841

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Vertical 3D diamond field effect transistors with nanoscale gate-all-around

Chi Sun Shuo Du Yang Guo Tingting Hao Linyuan Zhao Renrong Liang Haitao Ye Junjie Li Changzhi Gu

Year: 2022 Journal: Materials Science in Semiconductor Processing Vol: 148 Pages: 106841-106841 Publisher: Elsevier BV

DOI: 10.1016/j.mssp.2022.106841

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Keywords:

Materials science Diamond Transistor Optoelectronics Fabrication Field-effect transistor Leakage (economics) Nanotechnology Voltage Electrical engineering

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Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Vertical 3D diamond field effect transistors with nanoscale gate-all-around

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