JOURNAL ARTICLE

Vertical 3D diamond field effect transistors with nanoscale gate-all-around

Chi SunShuo DuYang GuoTingting HaoLinyuan ZhaoRenrong LiangHaitao YeJunjie LiChangzhi Gu

Year: 2022 Journal:   Materials Science in Semiconductor Processing Vol: 148 Pages: 106841-106841   Publisher: Elsevier BV
Keywords:
Materials science Diamond Transistor Optoelectronics Fabrication Field-effect transistor Leakage (economics) Nanotechnology Voltage Electrical engineering

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Topics

Diamond and Carbon-based Materials Research
Physical Sciences →  Materials Science →  Materials Chemistry
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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