Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

Chaofei Zha; Wei Luo; Xia Zhang; Xin Yan; Xiaomin Ren

doi:10.1186/s11671-022-03740-1

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Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

Chaofei Zha Wei Luo Xia Zhang Xin Yan Xiaomin Ren

Year: 2022 Journal: Nanoscale Research Letters Vol: 17 (1)Pages: 101-101 Publisher: Springer Science+Business Media

DOI: 10.1186/s11671-022-03740-1

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Keywords:

Materials science Optoelectronics Neuromorphic engineering Long-term potentiation Nanowire Transistor Synaptic plasticity Synaptic weight Postsynaptic Current Voltage Nanotechnology Electrical engineering Neuroscience Computer science Patch clamp Electrophysiology Chemistry Artificial neural network

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Neuroscience and Neural Engineering

Life Sciences → Neuroscience → Cellular and Molecular Neuroscience

Photoreceptor and optogenetics research

Life Sciences → Neuroscience → Cellular and Molecular Neuroscience

Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

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