Self-aligned gate-all-around InAs/InP core–shell nanowire field-effect transistors

Abstract

Field-effect transistors (FETs) are fabricated using an optimized gate-all-around gate-overlap structure and an InAs/InP core–shell nanowire (NW) channel. A short-channel device with the gate length of 100 nm exhibits superb on-state properties. Subthreshold swing of 85 mV/decade is realized in a long-channel device, suggesting an advantage of the core–shell NW channel. Post-annealing is found to improve the subthreshold properties, which is partly ascribed to the formation of InAlAs alloy at the interface between the InAs core and Al source/drain electrodes.