Growth of GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- layers by molecular-beam epitaxy

B. R. Semyagin; А. В. Колесников; М. А. Putyato; В. В. Преображенский; T. B. Popova; V. I. Ushanov; V. V. Chaldyshev

doi:10.21883/sc.2022.03.53057.9764

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Growth of GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- layers by molecular-beam epitaxy

B. R. Semyagin А. В. Колесников М. А. Putyato В. В. Преображенский T. B. Popova V. I. Ushanov V. V. Chaldyshev

Year: 2022 Journal: Физика и техника полупроводников Vol: 56 (3)Pages: 215-215 Publisher: Izdatel'stvo Nauka

DOI: 10.21883/sc.2022.03.53057.9764

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Abstract

By molecular-beam epitaxy we have grown epitaxial layers of GaAs 1-x Bi x solid solutions with a bismuth content of 0<x<0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers. Keywords: gallium arsenide, bismuth, molecular-beam epitaxy, bandgap.

Keywords:

Molecular beam epitaxy Bismuth Gallium arsenide Epitaxy Materials science Substrate (aquarium) Gallium Optoelectronics Nanotechnology Layer (electronics) Metallurgy Biology

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Growth of GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- layers by molecular-beam epitaxy

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