Growth of GaAs<sub>1–x</sub>Bi<sub>x</sub>/GaAs multi‐quantum wells by molecular beam epitaxy

Yoriko Tominaga; Yusuke Kinoshita; Gan Feng; Kunishige Oe; Masahiro Yoshimoto

doi:10.1002/pssc.200779214

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Growth of GaAs_1–xBi_x/GaAs multi‐quantum wells by molecular beam epitaxy

Yoriko Tominaga Yusuke Kinoshita Gan Feng Kunishige Oe Masahiro Yoshimoto

Year: 2008 Journal: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Vol: 5 (9)Pages: 2719-2721 Publisher: Wiley

DOI: 10.1002/pssc.200779214

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Abstract

Abstract GaAs 1–x Bi x /GaAs multi‐quantum well (MQW) structures were grown for the first time by molecular beam epitaxy (MBE). Successful growth of MQWs was demonstrated by observing clear satellite peaks in high‐resolution X‐ray diffraction (HR‐XRD) measurements. Photoluminescence (PL) emission at room temperature (RT) was observed from the MQWs. The peak energy of RT PL emitted from GaAs 0.948 Bi 0.052 /GaAs MQWs increased with decreasing thickness of the well layer, which implies quantum size effect. The MQW structures were thermally stable even after annealing up to 800 °C, and the PL emission was observed even after annealing up to 600 °C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Keywords:

Molecular beam epitaxy Photoluminescence Annealing (glass) Quantum well Materials science Diffraction Optoelectronics Epitaxy Gallium arsenide X-ray crystallography Optics Layer (electronics) Physics Nanotechnology Metallurgy

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Growth of GaAs_1–xBi_x/GaAs multi‐quantum wells by molecular beam epitaxy

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