InSb<sub>1-x</sub>Bi<sub>x</sub> Films Grown by Molecular Beam Epitaxy

Kunishige Oe; Seigo Ando; Koichi Sugiyama

doi:10.1143/jjap.20.l303

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InSb_1-xBi_x Films Grown by Molecular Beam Epitaxy

Kunishige Oe Seigo Ando Koichi Sugiyama

Year: 1981 Journal: Japanese Journal of Applied Physics Vol: 20 (4)Pages: L303-L303 Publisher: Institute of Physics

DOI: 10.1143/jjap.20.l303

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Abstract

InSb 1- x Bi x thin films were grown on InSb substrates by molecular beam epitaxy. The band-gaps of the films were confirmed to shift to longer wavelength with the increase of InBi mole fraction in the films by the measurement of p - n junction photovoltaic response.

Keywords:

Molecular beam epitaxy Epitaxy Materials science Thin film Optoelectronics Band gap Analytical Chemistry (journal) Chemistry Nanotechnology Layer (electronics)

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Near-Field Optical Microscopy

Physical Sciences → Engineering → Biomedical Engineering

InSb_1-xBi_x Films Grown by Molecular Beam Epitaxy

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