Tabletop Fabrication of High-Performance MoS₂ Field-Effect Transistors

Abstract

A simple way to prepare field-effect transistors (FETs) using MoS₂ on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS₂ as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without damage. The final performance is comparable to that of the SiO₂-backgated devices prepared by lithography and metal evaporators. The role of the silver paste and heat treatment in vacuum is investigated by device and spectroscopic analysis.