High-Performance MoS₂ Field Effect Transistors

Abstract

Field-effect transistors (FETs) are integrated into various electronic devices, allowing them to achieve energy -efficient high-speed switching. However, devices with bulk or 3D semiconductor channels have begun to experience high off -state currents. As a result, the reduction in size of FETs has been limited by increasing static power and the other challenges associated with short -channel effects. In comparison, in FETs that have a channel made from 2D semiconductors, all electrons are confined in naturally atomically thin channels and, hence, all carriers are uniformly influenced by the gate voltage. This excellent gate coupling allows the suppression of short -channel effects. Therefore, the FET community has shifted its interest to 2D materials with sizable (>0.3 eV) bandgaps so that low off -state currents and high on -state currents can be realized. Among them, due to the intriguing electrical and optical characteristics, 2D transition metal dichalcogenides such as MoS 2 have attracted tremendous research attention. In recent years, mono- and few -layered MoS 2 have been incorporated into FETs, exhibiting high current modulation and low sub -threshold slope.