JOURNAL ARTICLE
Passivation of gallium arsenside by reactively sputtered gallium nitride thin films
Year: 1985 Journal: Microelectronics Journal Vol: 16 (2)Pages: 61-61 Publisher: Elsevier BV
Keywords:
Gallium Gallium nitride Passivation Materials science Optoelectronics Sputtering Thin film Nitride Metallurgy Composite material Layer (electronics) Nanotechnology
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Acoustic Wave Resonator Technologies
Physical Sciences → Engineering → Biomedical Engineering
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