JOURNAL ARTICLE
Passivation of gallium arsenide by reactively sputtered gallium nitride thin films
Year: 1983 Journal: Microelectronics Reliability Vol: 23 (6)Pages: 1185-1186 Publisher: Elsevier BV
Keywords:
Amorphous solid Materials science Annealing (glass) Epitaxy Transmission electron microscopy Gallium arsenide Wafer Dislocation Recrystallization (geology) Gallium nitride Gallium Passivation Optoelectronics Ion implantation Ion Crystallography Composite material Metallurgy Nanotechnology Chemistry Layer (electronics)
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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