JOURNAL ARTICLE
Passivation of gallium arsenide by reactively sputtered gallium nitride thin films
Year: 1983 Journal: Microelectronics Journal Vol: 14 (1)Pages: 43-48 Publisher: Elsevier BV
Keywords:
Materials science Gallium arsenide Passivation Gallium Gallium nitride Nitride Auger electron spectroscopy Nitrogen Interface (matter) Thin film Optoelectronics Analytical Chemistry (journal) Composite material Metallurgy Nanotechnology Chemistry Layer (electronics)
Metrics
1
Cited By
0.00
FWCI (Field Weighted Citation Impact)
15
Refs
0.08
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
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