ALD Grown Functional Oxide Layers for Nonvolatile Resistive Switching Memory Applications

Susanne Hoffmann‐Eifert; Rainer Waser

doi:10.1149/ma2012-02/31/2575

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ALD Grown Functional Oxide Layers for Nonvolatile Resistive Switching Memory Applications

Susanne Hoffmann‐Eifert Rainer Waser

Year: 2012 Journal: ECS Meeting Abstracts Vol: MA2012-02 (31)Pages: 2575-2575 Publisher: Institute of Physics

DOI: 10.1149/ma2012-02/31/2575

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Abstract

Abstract not Available.

Keywords:

Non-volatile memory Resistive random-access memory Materials science Optoelectronics Resistive touchscreen Oxide Computer science Nanotechnology Electrical engineering Voltage Engineering Metallurgy Operating system

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Topics

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Magnetic and transport properties of perovskites and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ALD Grown Functional Oxide Layers for Nonvolatile Resistive Switching Memory Applications

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