Dielectric properties of ytterbium oxide films deposited by electron beam evaporation

T. Wiktorczyk; C. Wesołowska

doi:10.1016/0040-6090(80)90178-9

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Dielectric properties of ytterbium oxide films deposited by electron beam evaporation

T. Wiktorczyk C. Wesołowska

Year: 1980 Journal: Thin Solid Films Vol: 71 (1)Pages: 15-21 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(80)90178-9

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Keywords:

Materials science Dielectric Capacitance Evaporation Ytterbium Electron beam physical vapor deposition Permittivity Oxide Temperature coefficient Thin film Cathode ray Atmospheric temperature range Analytical Chemistry (journal) Electrode Electron Composite material Optoelectronics Nanotechnology Doping Chemistry Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Dielectric properties of ytterbium oxide films deposited by electron beam evaporation

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