JOURNAL ARTICLE

Electrical Characteristics of GaN and Si Based Metal-Oxide-Semiconductor (MOS) Capacitors

T. HossainJames H. EdgarDaming Wei

Year: 2011 Journal:   ECS Meeting Abstracts Vol: MA2011-02 (27)Pages: 1924-1924   Publisher: Institute of Physics

Abstract

Abstract not Available.

Keywords:
Capacitor Materials science Semiconductor Optoelectronics Oxide Metal Engineering physics Electrical engineering Metallurgy Voltage Engineering

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Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
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