JOURNAL ARTICLE
Electrical Characteristics of GaN and Si Based Metal-Oxide-Semiconductor (MOS) Capacitors
T. HossainJames H. EdgarDaming Wei
Year: 2011 Journal: ECS Meeting Abstracts Vol: MA2011-02 (27)Pages: 1924-1924 Publisher: Institute of Physics
Abstract
Abstract not Available.
Keywords:
Capacitor Materials science Semiconductor Optoelectronics Oxide Metal Engineering physics Electrical engineering Metallurgy Voltage Engineering
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
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