Electrical properties of MoSe2 metal-oxide-semiconductor capacitors

Hae In Jeong; Seonyoung Park; Hae In Yang; Woong Choi

doi:10.1016/j.matlet.2019.06.072

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JOURNAL ARTICLE

Electrical properties of MoSe2 metal-oxide-semiconductor capacitors

Hae In Jeong Seonyoung Park Hae In Yang Woong Choi

Year: 2019 Journal: Materials Letters Vol: 253 Pages: 209-212 Publisher: Elsevier BV

DOI: 10.1016/j.matlet.2019.06.072

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Keywords:

Materials science Capacitor Capacitance Doping Semiconductor Optoelectronics Oxide Metal Voltage Depletion region Electrical engineering Electrode Metallurgy Chemistry

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

MXene and MAX Phase Materials

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electrical properties of MoSe2 metal-oxide-semiconductor capacitors

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