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JOURNAL ARTICLE

Electrical characteristics and reliability properties of metal–oxide–semiconductor capacitors with HfZrLaO gate dielectrics

C.H. LiuH. W. Chen

Year: 2010 Journal:   Microelectronics Reliability Vol: 50 (5)Pages: 599-602   Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2010.01.014
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Keywords:
Capacitor Reliability (semiconductor) Materials science Dielectric Semiconductor Optoelectronics Oxide Metal Time-dependent gate oxide breakdown Electrical engineering Gate dielectric Electronic engineering Gate oxide Engineering physics Engineering Transistor Metallurgy Voltage Physics Power (physics)

Metrics

7
Cited By
1.55
FWCI (Field Weighted Citation Impact)
23
Refs
0.85
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ferroelectric and Negative Capacitance Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Memory and Neural Computing
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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