Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

C. H. Liu; Y.-L. Chen; Chaowei Cheng; H. W. Chen; H. W. Hsu; S. Y. Chen; Heng‐Sheng Huang; Mu‐Chun Wang

doi:10.1109/inec.2011.5991693

ScienceGate Book Chapters

JOURNAL ARTICLE

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

C. H. Liu Y.-L. Chen Chaowei Cheng H. W. Chen H. W. Hsu S. Y. Chen Heng‐Sheng Huang Mu‐Chun Wang

Year: 2011 Vol: 91 Pages: 1-2

DOI: 10.1109/inec.2011.5991693

Get Full-Text PDF Get Analytical Report

Abstract

Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

Keywords:

Time-dependent gate oxide breakdown Capacitor Materials science Dielectric Dielectric strength Gate dielectric Optoelectronics Gate oxide Atomic layer deposition High-κ dielectric Film capacitor Oxide Semiconductor Layer (electronics) Electronic engineering Electrical engineering Composite material Voltage Transistor Metallurgy Engineering

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.12

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Abstract

Metrics

Topics

Related Documents

Time dependent dielectric breakdown (TDDB) characteristics of metal–oxide–semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Electrical characteristics and reliability properties of metal–oxide–semiconductor capacitors with HfZrLaO gate dielectrics

Polarity dependent thermochemical E-model for describing time dependent dielectric breakdown in metal-oxide-semiconductor devices with hyper-thin gate dielectrics

Si1−xGex metal-oxide-semiconductor capacitors with HfTaOx gate dielectrics

Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics