JOURNAL ARTICLE
Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics
Year: 2005 Journal: Microelectronics Reliability Vol: 45 (12)Pages: 1835-1841 Publisher: Elsevier BV
Keywords:
Time-dependent gate oxide breakdown Acceleration Weibull distribution Dielectric strength Avalanche diode Quantum tunnelling Materials science Breakdown voltage Gate oxide Electrical engineering Range (aeronautics) Voltage Dielectric Electron Optoelectronics Engineering Physics Transistor Composite material Mathematics
Metrics
20
Cited By
1.61
FWCI (Field Weighted Citation Impact)
22
Refs
0.85
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences → Engineering → Electrical and Electronic Engineering
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