JOURNAL ARTICLE
Voltage acceleration of time dependent breakdown of ultra-thin NO and NON dielectrics
Year: 2008 Journal: Microelectronics Reliability Vol: 48 (8-9)Pages: 1189-1192 Publisher: Elsevier BV
Keywords:
Dram Acceleration Time-dependent gate oxide breakdown Dielectric Reliability (semiconductor) Dielectric strength Scaling Power law Voltage Materials science Exponent Electrical engineering Work (physics) Power (physics) Engineering Optoelectronics Physics Gate dielectric Mechanical engineering Transistor Mathematics Classical mechanics Thermodynamics
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3
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0.08
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Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Ferroelectric and Negative Capacitance Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
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