Voltage Acceleration of Ultra-Thin Gate Oxide Degradation before and after Soft Breakdown

Takuji Hosoi; Shigeyasu Uno; Yoshinari Kamakura; Kenji Taniguchi

doi:10.7567/ssdm.2002.a-8-1

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Voltage Acceleration of Ultra-Thin Gate Oxide Degradation before and after Soft Breakdown

Takuji Hosoi Shigeyasu Uno Yoshinari Kamakura Kenji Taniguchi

Year: 2002

DOI: 10.7567/ssdm.2002.a-8-1

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Keywords:

Materials science Degradation (telecommunications) Acceleration Optoelectronics Oxide Voltage Breakdown voltage Gate oxide Time-dependent gate oxide breakdown Electrical engineering Transistor Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

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Integrated Circuits and Semiconductor Failure Analysis

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Voltage Acceleration of Ultra-Thin Gate Oxide Degradation before and after Soft Breakdown

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