Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Chuan‐Hsi Liu; H. W. Hsu; Hung‐Wen Chen; Pi-Chun Juan; Mu‐Chun Wang; Chin-Po Cheng; Heng‐Sheng Huang

doi:10.1016/j.mee.2011.04.009

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Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Chuan‐Hsi Liu H. W. Hsu Hung‐Wen Chen Pi-Chun Juan Mu‐Chun Wang Chin-Po Cheng Heng‐Sheng Huang

Year: 2011 Journal: Microelectronic Engineering Vol: 89 Pages: 15-18 Publisher: Elsevier BV

DOI: 10.1016/j.mee.2011.04.009

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Keywords:

Time-dependent gate oxide breakdown Materials science Capacitor Dielectric strength Stress (linguistics) Dielectric Optoelectronics Oxide Metal gate Gate oxide Doping Voltage Electrical engineering Transistor Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

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