JOURNAL ARTICLE

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Keywords:
Time-dependent gate oxide breakdown Materials science Capacitor Dielectric strength Stress (linguistics) Dielectric Optoelectronics Oxide Metal gate Gate oxide Doping Voltage Electrical engineering Transistor Metallurgy

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4
Cited By
0.95
FWCI (Field Weighted Citation Impact)
19
Refs
0.78
Citation Normalized Percentile
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Citation History

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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