JOURNAL ARTICLE
Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics
Chuan‐Feng ShihK. T. HungC. Y. HsiaoShimpei ShuW.M. Li
Year: 2009 Journal: Journal of Alloys and Compounds Vol: 480 (2)Pages: 541-546 Publisher: Elsevier BV
Keywords:
Materials science Dielectric Capacitor High-κ dielectric Optoelectronics Gate dielectric Capacitance Schottky diode Oxide Annealing (glass) Semiconductor Leakage (economics) Equivalent oxide thickness Schottky barrier Wide-bandgap semiconductor Analytical Chemistry (journal) Gate oxide Voltage Electrical engineering Chemistry Composite material Electrode Diode Transistor Metallurgy
Metrics
36
Cited By
3.99
FWCI (Field Weighted Citation Impact)
19
Refs
0.95
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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