Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures

K. Abdullah; M.J. Abdullah; F.K. Yam; Z. Hassan

doi:10.1016/j.mee.2005.03.007

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JOURNAL ARTICLE

Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures

K. Abdullah M.J. Abdullah F.K. Yam Z. Hassan

Year: 2005 Journal: Microelectronic Engineering Vol: 81 (2-4)Pages: 201-205 Publisher: Elsevier BV

DOI: 10.1016/j.mee.2005.03.007

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Keywords:

Materials science Scanning electron microscope Optoelectronics Silicon Fabrication Gallium nitride Substrate (aquarium) Semiconductor Oxide Nanotechnology Composite material Metallurgy

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures

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