JOURNAL ARTICLE

Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures

K. AbdullahM.J. AbdullahF.K. YamZ. Hassan

Year: 2005 Journal:   Microelectronic Engineering Vol: 81 (2-4)Pages: 201-205   Publisher: Elsevier BV
Keywords:
Materials science Scanning electron microscope Optoelectronics Silicon Fabrication Gallium nitride Substrate (aquarium) Semiconductor Oxide Nanotechnology Composite material Metallurgy

Metrics

4
Cited By
0.23
FWCI (Field Weighted Citation Impact)
13
Refs
0.57
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
© 2026 ScienceGate Book Chapters — All rights reserved.