Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Onoriode N. Ogidi-Ekoko; Justin C. Goodrich; Alexandra J. Howzen; Matthew R. Peart; Nicholas C. Strandwitz; Jonathan J. Wierer; Nelson Tansu

doi:10.1016/j.sse.2020.107881

JOURNAL ARTICLE

Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Onoriode N. Ogidi-Ekoko Justin C. Goodrich Alexandra J. Howzen Matthew R. Peart Nicholas C. Strandwitz Jonathan J. Wierer Nelson Tansu

Year: 2020 Journal: Solid-State Electronics Vol: 172 Pages: 107881-107881 Publisher: Elsevier BV

DOI: 10.1016/j.sse.2020.107881

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Keywords:

Materials science Dielectric Capacitance Atomic layer deposition Current density Capacitor Stack (abstract data type) Leakage (economics) Equivalent oxide thickness Oxide Analytical Chemistry (journal) Hysteresis Semiconductor Optoelectronics Layer (electronics) Gate oxide Voltage Electrical engineering Nanotechnology Electrode Condensed matter physics Chemistry Metallurgy Transistor

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electrical properties of MgO/GaN metal-oxide-semiconductor structures

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