Growth and characterization of low-k dielectrics for multilevel interconnect applications

Minrui Wang

doi:10.32657/10356/3674

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Growth and characterization of low-k dielectrics for multilevel interconnect applications

Minrui Wang

Year: 2005

DOI: 10.32657/10356/3674

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Abstract

This thesis focuses on the growth and characterization of carbon doped silicon oxide (SiO(C,H)) low k dielectrics for multilevel interconnect applications.

Keywords:

Microelectronics Interconnection Characterization (materials science) Dielectric Materials science Electronic engineering Process (computing) Engineering physics Engineering Electrical engineering Nanotechnology Computer science Optoelectronics Telecommunications

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth and characterization of low-k dielectrics for multilevel interconnect applications

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