Opportunities and challenges in ultra low k dielectrics for interconnect applications

S. Purushothaman; S. Nitta; John Ryan; C. Narayan; Mahadevaiyer Krishnan; Sidney Cohen; S. James Gates; S. J. Whitehair; James L. Hedrick; Christy Tyberg; S. Greco; Kenneth P. Rodbell; E. Huang; T. Dalton; Ronald DellaGuardia; K. L. Saenger; E. Simonyi; S.-T. Chen; K. Malone; R.L. Miller; Willi Volksen

doi:10.1109/iedm.2001.979561

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Opportunities and challenges in ultra low k dielectrics for interconnect applications

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Abstract

In this paper, we discuss the challenges associated with producing, characterizing and integrating porous dielectrics into back-end-of-line (BEOL) interconnects and present results from our integration evaluations.

Keywords:

Back end of line Interconnection Dielectric Materials science Optoelectronics Electronic engineering Engineering physics Computer science Engineering Telecommunications

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Opportunities and challenges in ultra low k dielectrics for interconnect applications

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