Interconnect materials challenges for sub 20 nm technology nodes: Ultra low-k dielectrics

Abstract

This presentation is an overview of ultra low dielectric constant (low-k) materials that have been developed for sub 20 nm technology nodes. These dielectrics include highly porous organosilicate glasses (OSG: both PECVD and spin-on) and new classes of materials like metal organic frameworks (MOF) and covalent organic frameworks (COF). In addition to the extended overview of the materials properties, new technological approaches helping to reduce plasma induced degradation (damage) and allowing the pore sealing are also discussed. For the plasma damage reduction, pore stuffing technologies are considered as promising. For the sealing of ultra low-k materials that have pore size larger than 3-5 nm, special PMO (periodic mesoporous oxide) have been developed and discussed.