Plasma-Enhanced Combustion-Processed Al₂O₃ Gate Oxide for In₂O₃ Thin Film Transistors

Abstract

In this study, we describe how to obtain high-quality Al ₂ O ₃ dielectric thin films and their implementation in In ₂ O ₃ thin film transistors by combining plasma treatment and combustion process at low temperatures (250 °C). The single layer Al ₂ O ₃ dielectric formed by this technique exhibited a higher areal capacitance and a lower leakage level compared with those of conventional solution-processed Al ₂ O ₃ . The resulting TFTs presented a superior electrical performance at a low operating voltage of 2 V, with a positive threshold voltage of 0.39 V, a subthreshold swing of 0.V/decade, an On/Off ratio of 1.8×10 ⁴ , and a superior mobility of 136 cm ² V ^-1 s ^-1 .